? semiconductor components industries, llc, 2002 january, 2002 rev. 2 1 publication order number: mbr350/d mbr350, mbr360 mbr360 is a preferred device axial lead rectifiers . . . employing the schottky barrier principle in a large area metaltosilicon power diode. stateoftheart geometry features epitaxial construction with oxide passivation and metal overlap contact. ideally suited for use as rectifiers in lowvoltage, highfrequency inverters, free wheeling diodes, and polarity protection diodes. ? extremely low v f ? low power loss/high efficiency ? highly stable oxide passivated junction ? low stored charge, majority carrier conduction mechanical characteristics: ? case: epoxy, molded ? weight: 1.1 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 220 c max. for 10 seconds, 1/16 from case ? shipped in plastic bags, 500 per bag ? available tape and reeled, 1500 per reel, by adding a arl'' suffix to the part number ? polarity: cathode indicated by polarity band ? marking: b350, b360 maximum ratings rating symbol max unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage mbr350 mbr360 v rrm v rwm v r 50 60 v average rectified forward current t a = 65 c (r ja = 28 c/w, p.c. board mounting) i o 3.0 a nonrepetitive peak surge current (note 1) (surge applied at rated load conditions halfwave, single phase, 60 hz, t l = 75 c) i fsm 80 a operating and storage junction temperature range (reverse voltage applied) t j , t stg 65 to +150 c peak operating junction temperature (forward current applied) t j(pk) 150 c 1. lead temperature reference is cathode lead 1/32 from case. device package shipping ordering information http://onsemi.com axial lead case 26705 (do201ad) style 1 schottky barrier rectifiers 3.0 amperes 50, 60 volts preferred devices are recommended choices for future use and best overall value. mbr350 axial lead 500 units/bag mbr350rl axial lead 1500/tape & reel mbr360 axial lead 500 units/bag mbr360rl axial lead 1500/tape & reel marking diagram b3x0 b3x0 = device code x = 5 or 6
mbr350, mbr360 http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient (see note 4, mounting method 3) r q ja 28 c/w electrical characteristics (t l = 25 c unless otherwise noted) (note 2) characteristic symbol max unit maximum instantaneous forward voltage (note 3) (i f = 1.0 amp) (i f = 3.0 amp) (i f = 9.4 amp) v f 0.600 0.740 1.080 v maximum instantaneous reverse current @ rated dc voltage (note 3) t l = 25 c t l = 100 c i r 0.60 20 ma 2. lead temperature reference is cathode lead 1/32 from case. 3. pulse test: pulse width = 300 m s, duty cycle = 2.0%. t a , ambient temperature (c ) 20 100 60 40 80 4.0 2.0 3.0 5.0 0 1.0 dc square wave 120 140 160 i , average forward current (amps) f (av) v r reverse voltage (volts) 020 10 30 40 0.002 0.005 0.01 0.05 0.02 0.10 0.50 0.20 20 10 5.0 2.0 1.0 25 c v f, instantaneous voltage (volts) 0.2 0 0.4 5.0 0.03 0.02 0.07 0.2 0.1 20 10 3.0 2.0 1.0 0.6 0.8 0.3 0.05 0.5 0.7 i , reverse current (ma) r 7.0 i , instantaneous forward current (amps) f 1.0 1.2 1.4 *the curves shown are typical for the highest voltage device in the voltage grouping. typical reverse current for lower voltage selections can be estimated from these same curves if v r is sufficiently below rated v r . 50 60 80 75 c 100 c t j = 150 c t j = 100 c 25 c 75 c t j = 150 c rated v r r ja = 28 c/w 0 figure 1. typical forward voltage figure 2. typical reverse current* figure 3. current derating ambient (mounting method #3 per note 4)
mbr350, mbr360 http://onsemi.com 3 v r , reverse voltage (volts) i f (av) , average forward current (amps) 0 2.0 1.0 3.0 4.0 5.0 1.0 2.0 3.0 4.0 5.0 t j = 150 c p , average power dissipation (watts) f (av) dc square wave 020 10 30 40 50 70 300 t j = 25 c c, capacitance (pf) 200 40 30 50 100 figure 4. power dissipation figure 5. typical capacitance 0 typical values for r q ja in still air data shown for thermal resistance junctiontoambient (r q ja ) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. 1 2 3 mounting method lead length, l (in) 1/8 1/4 1/2 3/4 r q ja 50 51 53 55 c/w c/w c/w 58 59 61 63 28 note 4 e mounting data mounting method 1 p.c. board where available copper surface is small. l l l mounting method 2 vector pushin terminals t28 l mounting method 3 p.c. board with 21/2 x 21/2 copper surface. l = 1/2'' board ground plane
mbr350, mbr360 http://onsemi.com 4 package dimensions axial lead case 26705 (do201ad) issue g notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. cathode (polarity band) 2. anode 1 2 k a k d b dim min max min max millimeters inches a 0.287 0.374 7.30 9.50 b 0.189 0.209 4.80 5.30 d 0.047 0.051 1.20 1.30 k 1.000 --- 25.40 --- on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mbr350/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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